PLASMA-ASSISTED IN-SITU LASER DEPOSITION OF Y1BA2CU3O7-X SUPERCONDUCTING THIN-FILMS WITH LASER-HEATING AND ANNEALING
PLASMA-ASSISTED IN-SITU LASER DEPOSITION OF Y1BA2CU3O7-X SUPERCONDUCTING THIN-FILMS WITH LASER-HEATING AND ANNEALING
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DOI：
10.1016/0042-207x(94)90084-1
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发表时间：
1994-12-01
期刊：
影响因子：
4
通讯作者：
SERBEZOV, VS
中科院分区：
文献类型：
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作者：
ATANASOV, PA;TOMOV, RI;SERBEZOV, VS
采用等离子体辅助激光原位沉积技术在SrTiO 3（100）、ZrO 2（100）和MgO（100）基片上制备了Y1 Ba 2Cu 3 O 7-x高温薄膜。 薄膜是在低至450-550 ℃的衬底温度下通过XeCl准分子激光烧蚀沉积的。 一个直流氧等离子体的分压高达200毫微电子强迫氧掺入在薄膜生长过程中，在一个低的衬底温度。 点火和维持放电的问题通过适当的电极几何形状来解决。 采用连续CO2激光直接照射基片表面和准分子激光羽流的方法来降低颗粒的密度。 用X射线衍射、四探针交流电阻率测量、扫描电镜和X射线衍射仪对薄膜进行了表征。 AT（c）的起始温度约为88-90 K，J（c）在4.2 K时约为7 × 10（5）A cm-2。
Single-chamber laser processing of high temperature Y1Ba2Cu3O7-x thin films on SrTiO3(100), ZrO2(100) and MgO(100) substrates was carried out using plasma assisted in situ laser deposition. The films were deposited by XeCl excimer laser ablation at substrate temperatures as low as 450-550-degrees-C. A dc oxygen plasma at a partial pressure of up to 200 mtorr forced oxygen incorporation during the film growth at a low substrate temperature. The problem of firing and maintaining the discharge was solved by appropriate electrode geometry. Direct cw CO2 laser irradiation of the substrate surface and excimer laser plume were used to reduce the density of particulates. The films were characterized by: X-ray diffraction, four-point probe ac electrical resistivity measurements, SEM and XMA. AT(c) onset of approximately 88-90 K and J(c) approximately 7 x 10(5) A cm-2 at 4.2 K were measured.