A Self-Consistent Non-Quasi-Static MOSFET Model for Circuit Simulation Based on Transient Carrier Response
A Self-Consistent Non-Quasi-Static MOSFET Model for Circuit Simulation Based on Transient Carrier Response
复制标题
基于瞬态载流子响应的自洽非准静态MOSFET电路仿真模型
DOI：
10.1143/jjap.42.2132
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发表时间：
2003
影响因子：
1.5
通讯作者：
M. Miura
中科院分区：
文献类型：
--
作者：
N. Nakayama;H. Ueno;T. Inoue;T. Isa;Masayasu Tanaka;M. Miura
我们开发了一个用于电路仿真的非准静态（NQS）金属氧化物半导体场效应晶体管（MOSFET）模型的基本概念。该模型基于载波响应延迟，并结合了载波密度沿信道的时间和位置依赖性。这就是NQS效应的确切起源。通过将模型结果与二维器件仿真结果进行比较，明确求解连续性方程，我们发现载波响应延迟由导电延迟和充电延迟组成。该模型成功地应用于漏极电流的瞬态特性测试。
We have developed a basic concept for a non-quasi-static (NQS) metal-oxide-semiconductor field-effect transistor (MOSFET) model for circuit simulation. The model is based on a carrier-response delay, and incorporates the time and position dependence of the carrier density along the channel. This is the exact origin of the NQS effect. By comparing model results with 2D device simulation results, solving the continuity equation explicitly, we found that the carrier-response delay consisted of a conductive delay and a charging delay. The developed model was successfully applied to test transient behavior of the drain current.