Photoemission and x-ray absorption studies of the isostructural to Fe-based superconductors diluted magnetic semiconductor Ba 1 -x K x (Zn 1 -y Mn y ) 2 As 2

Photoemission and x-ray absorption studies of the isostructural to Fe-based superconductors diluted magnetic semiconductor Ba 1 -x K x (Zn 1 -y Mn y ) 2 As 2
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DOI:
10.1103/physrevb.91.140401
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发表时间:
2015-04
期刊:
影响因子:
3.7
通讯作者:
H. Suzuki;K. Zhao;G. Shibata;Y. Takahashi;S. Sakamoto;K. Yoshimatsu;Bijuan Chen;H. Kumigashira;F. Chang;H. Lin;D. Huang;C. Chen;B. Gu;S. Maekawa;Y. Uemura;C. Jin;A. Fujimori
H. Suzuki;K. Zhao;G. Shibata;Y. Takahashi;S. Sakamoto;K. Yoshimatsu;Bijuan Chen;H. Kumigashira;F. Chang;H. Lin;D. Huang;C. Chen;B. Gu;S. Maekawa;Y. Uemura;C. Jin;A. Fujimori
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
H. Suzuki;K. Zhao;G. Shibata;Y. Takahashi;S. Sakamoto;K. Yoshimatsu;Bijuan Chen;H. Kumigashira;F. Chang;H. Lin;D. Huang;C. Chen;B. Gu;S. Maekawa;Y. Uemura;C. Jin;A. Fujimori

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Diluted magnetic semiconductors have attracted much attention as candidates for spintronic devices after the discovery of ferromagnetism in Mn-doped GaAs. However, the limited chemical solubility of the magnetic element Mn together with the inability to control carrier density independently of the magnetic element concentration are major obstacles to material design and applications. The newly found diluted magnetic semiconductor Ba${}_{1\ensuremath{-}y}$K${}_{y}$(Zn${}_{1\ensuremath{-}x}$Mn${}_{x}$)${}_{2}$As${}_{2}$, which has the same crystal structure as the iron-based superconductor BaFe${}_{2}$As${}_{2}$, circumvents these problems and exhibits ferromagnetic transition temperatures as high as 230 K. Using x-ray absorption and resonance photoemission spectroscopy this group explicitly demonstrates that the ThCr${}_{2}$Si${}_{2}$-type crystal structure is an ideal framework both for high-temperature superconductivity and for ferromagnetism, and that the carrier-induced ferromagnetism of GaMnAs is operating in other ferromagnetic semiconductors.
Diluted magnetic semiconductors have attracted much attention as candidates for spintronic devices after the discovery of ferromagnetism in Mn-doped GaAs. However, the limited chemical solubility of the magnetic element Mn together with the inability to control carrier density independently of the magnetic element concentration are major obstacles to material design and applications. The newly found diluted magnetic semiconductor Ba${}_{1\ensuremath{-}y}$K${}_{y}$(Zn${}_{1\ensuremath{-}x}$Mn${}_{x}$)${}_{2}$As${}_{2}$, which has the same crystal structure as the iron-based superconductor BaFe${}_{2}$As${}_{2}$, circumvents these problems and exhibits ferromagnetic transition temperatures as high as 230 K. Using x-ray absorption and resonance photoemission spectroscopy this group explicitly demonstrates that the ThCr${}_{2}$Si${}_{2}$-type crystal structure is an ideal framework both for high-temperature superconductivity and for ferromagnetism, and that the carrier-induced ferromagnetism of GaMnAs is operating in other ferromagnetic semiconductors.