Effect of Interfacial Reactions in Radical Process on Electrical Properties of Al_2O_3/Ge Gate Stack Structure
Effect of Interfacial Reactions in Radical Process on Electrical Properties of Al_2O_3/Ge Gate Stack Structure
复制标题
自由基过程中界面反应对Al_2O_3/Ge栅叠层结构电性能的影响
DOI：
10.1088/1742-6596/417/1/012001
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
Shigeaki Zaima
中科院分区：
文献类型：
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作者：
Kimihiko Kato;Mitsuo Sakashita;Wakana Takeuchi;Osamu Nakatsuka;Shigeaki Zaima
研究了Al_2O_3/Ge结构与氮(N)自由基过程的界面反应，以及化学键状态对电学性质的影响。角分辨硬X射线光电子能谱测量表明，在N自由基过程中，氧从Al2 O3薄膜提供到与Ge衬底的界面，Ge原子扩散到Al2 O3薄膜中。结果表明，AlGeON/Ge亚氧化物/Ge的堆积结构是通过N自由基过程形成的。从Al/AlGeON/Ge亚氧化物/Ge MOS电容器的电容-电压特性来看，AlGeON/Ge亚氧化物/Ge结构的形成有效地降低了界面处的界面态密度和Al2 O3薄膜中的载流子陷阱密度。界面态密度随界面处Ge次氧化物厚度的增加而减小。
We have investigated the interfacial reactions of Al 2 O 3/Ge structure with nitrogen (N) radical process, and the effect of the chemical bonding states on electrical properties. The angle resolved hard X-ray photoelectron spectroscopy measurement revealed that oxygen is supplied from the Al 2 O 3 film to the interface with Ge substrate during N radical process and Ge atoms diffuse into the Al 2 O 3 film. As a result, AlGeON/Ge suboxide/Ge stacked structure is formed by N radical process. From capacitance-voltage characteristics of Al/AlGeON/Ge suboxide/Ge MOS capacitors, both the interface state density at the interface and the carrier trap density in the Al 2 O 3 film are effectively decreased by the formation of AlGeON/Ge suboxide/Ge structure. The interface state density decreases with increasing in the thickness of Ge suboxide at the interface.