Observation and discussion of avalanche electroluminescence in GaN p-n diodes offering a breakdown electric field of 3MVcm-1
Observation and discussion of avalanche electroluminescence in GaN p-n diodes offering a breakdown electric field of 3MVcm-1
复制标题
DOI：
10.1088/1361-6641/aab73d
复制
发表时间：
2018-06-01
影响因子：
1.9
通讯作者：
Chowdhury, S.
中科院分区：
文献类型：
--
作者：
Mandal, S.;Kanathila, M. B.;Chowdhury, S.
我们报告的第一个观察雪崩电致发光的带-带复合（BTBR）的电子空穴对的击穿极限的氮化镓p-n二极管同质外延生长在单晶GaN衬底上。二极管表现出接近理想的击穿电保持为3 MV cm（-1），电致发光（EL）表现出在GaN的带隙附近和带隙处的发射能量的尖峰。通过产生具有低等离子体损伤的平滑弯曲台面边缘，使用蚀刻工程而不使用任何保持终端，实现了接近GaN材料极限的高临界电保持。上级材料质量对于这种近乎理想的性能至关重要。在击穿时记录的3 MV cm（-1）的电保持导致碰撞电离，通过击穿电压的正温度依赖性证实。的光谱数据提供的证据BTBR的电子空穴对产生的雪崩载流子倍增在耗尽区。
We report on the first observation of avalanche electroluminescence resulting from band-to-band recombination (BTBR) of electron hole pairs at the breakdown limit of Gallium Nitride p-n diodes grown homo-epitaxially on single crystalline GaN substrates. The diodes demonstrated a near ideal breakdown electric held of 3 MV cm(-1) with electroluminescence (EL) demonstrating sharp peaks of emission energies near and at the band gap of GaN. The high critical electric held, near the material limit of GaN, was achieved by generating a smooth curved mesa edge with low plasma damage, using etch engineering without any use of held termination. The superior material quality was critical for such a near-ideal performance. An electric held of 3 MV cm(-1) recorded at the breakdown resulted in impact ionization, confirmed by a positive temperature dependence of the breakdown voltage. The spectral data provided evidence of BTBR of electron hole pairs that were generated by avalanche carrier multiplication in the depletion region.