Ultrafast electron capture into p-modulation-doped quantum dots
Ultrafast electron capture into p-modulation-doped quantum dots
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DOI：
10.1063/1.1815371
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发表时间：
2004-11
影响因子：
4
通讯作者：
K. Gundogdu;K. Hall;T. Boggess;D. Deppe;O. Shchekin
中科院分区：
文献类型：
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作者：
K. Gundogdu;K. Hall;T. Boggess;D. Deppe;O. Shchekin
利用飞秒时间分辨光致发光实验研究了调制掺杂InAs量子点中电子和空穴的弛豫动力学。我们表明，作为掺杂的结果，载流子弛豫从势垒层的量子点基态的强烈增强，由于快速的电子-空穴散射涉及内置的载流子人口。p掺杂量子点的结果显示，相对于相应的未掺杂量子点，室温电子弛豫时间减少了三倍。利用飞秒时间分辨光致发光实验研究了调制掺杂InAs量子点中电子和空穴的弛豫动力学。我们表明，作为掺杂的结果，载流子弛豫从势垒层的量子点基态的强烈增强，由于快速的电子-空穴散射涉及内置的载流子人口。p掺杂量子点的结果显示，相对于相应的未掺杂量子点，室温电子弛豫时间减少了三倍。我们的研究结果对于调制速度超过30 GHz的高速GaAs基量子点激光器的发展是有希望的。
Electron and hole relaxation kinetics are studied in modulation-doped InAs quantum dots using femtosecond time-resolved photoluminescence experiments. We demonstrate that, as a result of doping, carrier relaxation from the barrier layers to the quantum dot ground states is strongly enhanced due to rapid electron–hole scattering involving the built-in carrier population. Results for p-doped quantum dots reveal a threefold decrease in the room-temperature electron relaxation time relative to corresponding undoped quantum dots. Our findings are promising for the development of high-speed, GaAs-based quantum dot lasers with modulation speeds in excess of 30GHz.Electron and hole relaxation kinetics are studied in modulation-doped InAs quantum dots using femtosecond time-resolved photoluminescence experiments. We demonstrate that, as a result of doping, carrier relaxation from the barrier layers to the quantum dot ground states is strongly enhanced due to rapid electron–hole scattering involving the built-in carrier population. Results for p-doped quantum dots reveal a threefold decrease in the room-temperature electron relaxation time relative to corresponding undoped quantum dots. Our findings are promising for the development of high-speed, GaAs-based quantum dot lasers with modulation speeds in excess of 30GHz.