Effect of N2 gas annealing and SiO2 barrier on the optical transmittance and electrical resistivity of a transparent Sb-doped SnO2 conducting film
Effect of N2 gas annealing and SiO2 barrier on the optical transmittance and electrical resistivity of a transparent Sb-doped SnO2 conducting film
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DOI：
10.1007/s10854-005-6453-4
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发表时间：
2005-02
期刊：
影响因子：
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通讯作者：
Tae-Young Lim;Chang-Yeoul Kim;Bum-Suk Kim;B. Choi;K. Shim
中科院分区：
文献类型：
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作者：
Tae-Young Lim;Chang-Yeoul Kim;Bum-Suk Kim;B. Choi;K. Shim
采用溶胶-凝胶浸涂法在钠钙玻璃衬底上制备ATO（掺锑氧化锡）透明导电薄膜的过程中，定量研究了衬底上形成的SiO2缓冲层和N2退火处理的影响。沉积的ATO薄膜被鉴定为结晶SnO 2相，在50 mm/min的提拉速度下，膜厚约为100 nm/层。在SiO2缓冲层/钠钙玻璃上沉积400 nm厚的ATO薄膜，然后在氮气气氛下退火，其透光率和电阻率分别为84%和5.0 × 10−3Ω·cm。XPS分析证实，SiO2缓冲层抑制了Na离子从衬底的扩散，阻止了Na 2SnO 3和SnO等第二相的形成，提高了薄膜中Sb离子的浓度和Sb 5 +/Sb 3+的比值。结果表明，N2退火处理导致Sn ~（4+）和Sb ~（5+）的还原，但Sn ~（4+）的还原更有效，从而降低了薄膜的电阻率，使薄膜具有优异的电学性能。©Springer Science + Business Media，Inc.
During the fabrication process of transparent conducting thin films of ATO (antimony-doped tin oxide) on a soda lime glass substrate by a sol-gel dip coating method, the effects of the SiO2buffer layer formed on the substrate and N2annealing treatment were investigated quantitatively. The deposited ATO thin film was identified as a crystalline SnO2phase and the film thickness was about 100 nm/layer at a withdrawal speed of 50 mm/min. Optical transmittance and electrical resistivity of the 400 nm-thick ATO thin film that was deposited on SiO2buffer layer/soda lime glass and then annealed under nitrogen atmosphere were 84% and 5.0 × 10−3Ω⋅cm, respectively. The XPS analysis confirmed that a SiO2buffer layer inhibited Na ion diffusion from the substrate, preventing the formation of a secondary phase such as Na2SnO3and SnO and increasing Sb ion concentration and ratio of Sb5+/Sb3+in the film. It was found that N2annealing treatment leads to the reduction of Sn4+as well as Sb5+, however the reduction of Sn4+is more effective, and consequently results in a decrease in the electrical resistivity to produce excellent electrical properties in the film. ©Springer Science + Business Media, Inc.