Deep levels and trapping mechanisms in chemical vapor deposited diamond
Deep levels and trapping mechanisms in chemical vapor deposited diamond
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化学气相沉积金刚石的深层能级和捕获机制
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
L. Lombardi
中科院分区：
文献类型：
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作者：
M. Bruzzi;D. Menichelli;S. Sciortino;L. Lombardi
在 300–650 K 的温度范围内，利用热刺激电流 (TSC) 和光致电流瞬态光谱 (PICTS) 分析对探测器级未掺杂化学气相沉积 (CVD) 金刚石样品进行了研究。发现了两个以前未知的缺陷，其特征在于活化能 E1=1.14 eV 和 E2=1.23 eV，横截面约为 σ≈10−13 cm2 浓度Nt≈1016 cm−3。 PICTS 可以清楚地观察到它们，并通过在 300-400 K 温度范围内使用分数退火循环在 TSC 测量中分离出它们。由于它们的陷阱参数，特别是高横截面，与 E1 和 E2 相对应的能级的捕获时间为 10-100 ps 量级。还研究了在约 500 K 处观察到的 TSC 主峰，并将其分解为活化能为 1 eV 量级、横截面范围为 10−19–10−17 cm2 的四个分量。其中三个级别表现出快速捕获率（0.1–10 ns），尽管它们...
Detector-grade undoped chemical vapor deposited (CVD) diamond samples have been studied with thermally stimulated currents (TSC) and photoinduced current transient spectroscopy (PICTS) analyses in the temperature range 300–650 K. Two previously unknown defects have been identified, characterized by activation energies E1=1.14 eV and E2=1.23 eV, cross sections of about σ≈10−13 cm2 and concentrations of Nt≈1016 cm−3. They have been clearly observed by PICTS and isolated in TSC measurements by use of a fractional annealing cycle in the temperature range 300–400 K. Due to their trap parameters, in particular the high cross section, the levels corresponding to E1 and E2 are characterized by capture times of the order of 10–100 ps. A dominant TSC peak observed at ≈500 K has been also investigated and has been resolved into four components with activation energies of the order of 1 eV and cross sections in the range 10−19–10−17 cm2. Three of these levels exhibit a fast capture rate (0.1–10 ns) in spite of their ...