InGaAs/InAlAs Quantum Well Mach-Zehnder Modulator with Single Microring Resonator
InGaAs/InAlAs Quantum Well Mach-Zehnder Modulator with Single Microring Resonator
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具有单微环谐振器的 InGaAs/InAlAs 量子阱马赫曾德尔调制器
DOI：
10.1143/jjap.51.02bg01
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
and Yasuo Kokubun
中科院分区：
文献类型：
--
作者：
Hiroki Kaneshige;Yuta Ueyama;Hitoshi Yamada;Hideki Yajima;Taro Arakawa;and Yasuo Kokubun
提出并实现了一种新颖的单微环InGaAs/InAlAs多量子阱(MQW)Mach-Zehnder(MZ)调制器，首次实现了驱动电压的显著降低。该调制器由多量子阱中的量子受限斯塔克效应(QCSE)驱动，微环中的相移增强效应有望显著降低调制器的驱动电压。用固体源分子束外延生长了一种波导结构，并用感应耦合等离子体刻蚀方法制作了该结构。采用浅间隙定向耦合器来控制母线与微环波导之间的耦合参数。为了防止MZ调制器的消光比劣化，采用非对称分路器作为输入耦合器。制作的微环MZ调制器的消光比约为17.5分贝。在静态调制下，L的半波电压与移相器长度Vπ的乘积为2.0VMM。这一数值是具有相同波导结构的传统MZ调制器的三分之一。
We propose and a novel InGaAs/InAlAs multiple quantum well (MQW) Mach–Zehnder (MZ) modulator with a single microring resonator, and a significant reduction of driving voltage is demonstrated for the first time. The modulator is driven by the quantum-confined Stark effect (QCSE) in the MQW and the driving voltage of the proposed modulator is expected to be significantly reduced by the phase-shift-enhancement effect in the microring. A waveguide structure was grown by solid-source molecular beam epitaxy and fabricated by inductively coupled plasma etching. A directional coupler with a shallow gap is employed to control the coupling parameters between a busline and the microring waveguide. An asymmetrical splitter was used as an input coupler to prevent the degradation of the extinction ratio of the MZ modulator. The extinction ratio of the fabricated microring MZ modulator was approximately 17.5 dB. The product of half-wave voltage and phase shifter length V π L was 2.0 Vmm in static modulation. This value was one-third that of a conventional MZ modulator with the same waveguide structure.