Thermal conductivity of half-Heusler superlattices
Thermal conductivity of half-Heusler superlattices
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DOI：
10.1088/0268-1242/29/12/124003
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发表时间：
2014-11
影响因子：
1.9
通讯作者：
T. Jaeger;P. Hołuj;C. Mix;Christoph Euler;M. Aguirre;S. Populoh;A. Weidenkaff;G. Jakob
中科院分区：
文献类型：
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作者：
T. Jaeger;P. Hołuj;C. Mix;Christoph Euler;M. Aguirre;S. Populoh;A. Weidenkaff;G. Jakob
薄膜和超晶格（SL）的TiNiSn和Zr 0.5？> Hf 0.5？>采用直流磁控溅射法在MgO（100）衬底上生长NiSn薄膜，以降低其热导率，提高热电优值ZT。对于周期为8.8 nm的SL，通过微分3ω方法测量1 Wm− 1 K −1的热导率。除了SL晶体结构的X-射线衍射分析，通过扫描/透射电子显微镜证实了光滑的界面。
Thin films and superlattices (SLs) of TiNiSn and Zr 0.5 ?> Hf 0.5 ?> NiSn layers have been grown by dc magnetron sputtering on MgO (100) substrates to reduce the thermal conductivity, aiming for improvement of the thermoelectric figure of merit ZT. The thermal conductivity of 1 Wm−1K−1 was measured by the differential 3ω method for an SL with a periodicity of 8.8 nm. In addition to x-ray diffraction analysis of the SL crystal structure, smooth interfaces were confirmed by scanning/transmission electron microscopy.