Fabrication and analysis of radiofrequency MEMS series capacitive single-pole double-throw switch
Fabrication and analysis of radiofrequency MEMS series capacitive single-pole double-throw switch
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DOI：
10.1117/1.jmm.15.4.045001
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发表时间：
2016-10
期刊：
影响因子：
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通讯作者：
D. Bansal;Anuroop Bajpai;Prem Kumar;M. Kaur;K. Rangra
中科院分区：
文献类型：
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作者：
D. Bansal;Anuroop Bajpai;Prem Kumar;M. Kaur;K. Rangra
抽象的。提出了一种基于串联电容配置的紧凑型射频 (RF) MEMS 单刀双掷 (SPDT) 开关。分析关键工艺参数以改进制造工艺。探索了一种用于提离法的冷热热冲击技术。结构中的残余应力通过刺血针测试结构进行量化，结果为 51 MPa。研究了残余应力对驱动电压的影响，将其值从 24 V 更改为 22 V。使用激光多普勒振动计测量，开关的谐振频率和开关速度分别为 11 kHz 和 44 μs。 SPDT开关的测量带宽为20 GHz（5至25 GHz），并通过高频结构模拟器©中的有限元方法模拟和先进设计系统©中的等效LCR电路进行了验证。对于上述带宽，开关的插入损耗为-0.1至-0.5 dB，隔离度优于-20 dB。
Abstract. A compact radiofrequency (RF) MEMS single-pole double-throw (SPDT) switch based on series capacitive configuration is proposed. The critical process parameters are analyzed to improve the fabrication process. A technique of cold–hot thermal shock for lift-off method is explored. The residual stress in the structure is quantified by lancet test structures that come out to be 51 MPa. Effect of residual stress on actuation voltage is explored, which changes its value from 24 to 22 V. Resonance frequency and switching speed of the switch are 11 kHz and 44 μs, respectively, measured using laser Doppler vibrometer. Measured bandwidth of the SPDT switch is 20 GHz (5 to 25 GHz), which is verified with finite element method simulations in high frequency structure simulator© and an equivalent LCR circuit in advanced design system©. Insertion loss of the switch lies in −0.1 to −0.5 dB with isolation better than −20 dB for the above-mentioned bandwidth.