Stark effect and oscillator strength in a Si1−xGex∕Si quantum disk
Stark effect and oscillator strength in a Si1−xGex∕Si quantum disk
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DOI：
10.1063/1.2719005
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发表时间：
2007-05
影响因子：
3.2
通讯作者：
Jin-long Liu;Jing Zhu
中科院分区：
文献类型：
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作者：
Jin-long Liu;Jing Zhu
在有效质量近似的框架下，我们发展了一种方法来研究Si 1 −xGex scinSi量子盘中的量子限制斯塔克效应。采用精确对角化技术，在垂直施加电场的绝热近似下计算了空穴能级。考虑了应变、有限偏移和不同材料中孔的有效质量之间的差异的影响。研究了Si 1 −xGex scinSi量子盘系统在垂直电场作用下的振子强度。我们的计算结果对Si 1 −xGex scinSi量子盘在光电器件中的应用是有用的。
In the framework of the effective mass approximation, we develop a method to study the quantum-confined Stark effect in a Si1−xGex∕Si quantum disk. The hole energy levels are calculated presence of a vertically applied electric field adiabatic approximation using an exact diagonalization technique. The effects of strain, finite offset, and the difference between effective masses of holes in different materials are taken into account. The oscillator strength of the Si1−xGex∕Si quantum disk system under a vertically applied electric field is also studied. Our calculated results are useful for the application of Si1−xGex∕Si quantum disks in photoelectric devices.