Observation of dislocations in β-Ga2O3 single-crystal substrates by synchrotron X-ray topography, chemical etching, and transmission electron microscopy
Observation of dislocations in β-Ga2O3 single-crystal substrates by synchrotron X-ray topography, chemical etching, and transmission electron microscopy
复制标题
通过同步加速器X射线形貌、化学蚀刻和透射电子显微镜观察β-Ga2O3单晶基板中的位错
DOI：
10.35848/1347-4065/ab7dda
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发表时间：
2020
影响因子：
1.5
通讯作者：
Yoshihiro Sugawara and Yukari Ishikawa
中科院分区：
文献类型：
--
作者：
Yongzhao Yao;Yoshihiro Sugawara and Yukari Ishikawa
