Vibration of Dimer on Ge(001) Surface Excited Coherently by Tunneling Current of Scanning Tunneling Microscopy
Vibration of Dimer on Ge(001) Surface Excited Coherently by Tunneling Current of Scanning Tunneling Microscopy
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DOI：
10.1143/jpsj.73.2362
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发表时间：
2004-09
影响因子：
1.7
通讯作者：
H. Kawai;O. Narikiyo
中科院分区：
文献类型：
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作者：
H. Kawai;O. Narikiyo
从理论上研究了扫描隧道显微镜（STM）隧道电流相干激发Ge（001）面上高振动数二聚体的振动。在STM实验中报告的局部结构的转变被证明是由STM的隧穿电流相干激发的二聚体振动驱动的。通过π * 带的准一维性质，半定量地再现了STM样品偏置电压，在该偏置电压以上，可以观察到向p（2 ×2）结构的转变。我们发现，激发速率有一个长期的，不衰减与距离STM尖端的一维带。在实验中观察到的依赖于偏置电压符号的转变区域的形状的对比差异由Ge（001）表面上的π * 带和π带的维度来解释。
The vibration of a dimer on a Ge(001) surface with a high vibrational number excited coherently by tunneling current of scanning tunneling microscopes (STMs), is theoretically investigated. The transformation of the local structures reported in STM experiments is shown to be driven by the dimer vibration excited coherently by the tunneling current of STM. The sample bias voltage of STM above which the transformation to the p(2 ×2) structure is able to be observed in the experiments, is semiquantitatively reproduced by the quasi-one-dimensional character of the π * -band. We show that the excitation rate has a term that does not decay with the distance from the STM tip for the one-dimensional band. The contrasting difference in shape of the transformed region that depends on the sign of the bias voltage observed in the experiments is explained by the dimensionalities of the π * -band and the π-band on the Ge(001) surface.