Optical and electrical properties of alkaline-doped and As-alloyed amorphous selenium films
Optical and electrical properties of alkaline-doped and As-alloyed amorphous selenium films
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DOI:
10.1007/s10854-019-01386-x
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发表时间:
2019-09-01
影响因子:
2.8
通讯作者:
Kasap, S. O.
中科院分区:
文献类型:
--
作者:
Gunes, O.;Koughia, C.;Kasap, S. O.
Electrical and optical properties Cs-doped a-Se0.95As0.05 (stabilized a-Se that has been alloyed with As) have been investigated. As expected there was no electron paramagnetic resonance signal on Cs-doped films or bulk samples, which put the spin-active defect concentrations below 10(15) cm(-3). The Cs-addition to a-Se0.95As0.05, leads to the n-type doping of a-Se0.95As0.05 in the sense that the undoped material has mu(h)tau(h)>> mu(e)tau(e) whereas the alkaline doped material has mu(e)tau(e)>> mu(h)tau(h). The Cs addition also leads to a reduction of the refractive index n and a reduction of the glass transition temperature T-g, and affects the temporal relaxation behavior of a-Se film thickness after annealing and sequential quenching. We have measured the refractive index dispersion, n(lambda) versus lambda, bandgap (E-g) and Urbach width (Delta E) for undoped and Cs-doped films at room temperature and at a temperature just below the glass transition temperature. The photoluminescence (PL) experiments confirm earlier experiments that the PL emission is a broad emission spectrum with a significant Stoke's shift following roughly the similar to E-g/2 empirical rule. The present work confirms that Cs-doped and As-stabilized a-Se is n-type.