Laser-induced damage thresholds at different temperature for optical devices
Laser-induced damage thresholds at different temperature for optical devices
复制标题
DOI：
10.1117/12.2019870
复制
发表时间：
2013-07
期刊：
影响因子：
--
通讯作者：
K. Mikami;S. Motokoshi;T. Somekawa;T. Jitsuno;M. Fujita;K. Tanaka
中科院分区：
文献类型：
--
作者：
K. Mikami;S. Motokoshi;T. Somekawa;T. Jitsuno;M. Fujita;K. Tanaka
本文介绍了光学器件激光损伤阈值的温度依赖性研究。此外，利用Nd:YAG和Ti：蓝宝石激光器阐明了近年来单层光学涂层激光损伤阈值的温度依赖性。激光器的波长分别为1064 nm和800 nm，脉冲宽度分别为4 ns、200 ps、2 ps和100 fs。当脉冲长度大于几皮秒时，涂层基板的激光损伤阈值随温度的降低而升高。对于短于几皮秒的脉冲，这种温度依赖性被逆转了。给出了激光损伤机理的流程图。温度依赖性的差异用流程图来解释。作为理论分析的结果之一，电子电阻率即电子迁移率是解释激光损伤阈值温度依赖性的关键。
Studies for temperature dependences of laser-induced damage thresholds for optical devise is introduced in this paper. Additionally, the temperature dependence of the laser-induced damage threshold of single-layer optical coatings as resent progress was clarified using Nd:YAG and Ti:sapphire lasers. The wavelengths of the lasers were 1064 nm and 800 nm and the pulse widths were 4 ns, 200 ps, 2 ps, and 100 fs. For pulses longer than a few picoseconds, the laser-induced damage threshold of coated substrates increased with decreasing temperature. This temperature dependence was reversed for pulses shorter than a few picoseconds. A flowchart was presented including the several mechanisms for laser damage mechanism. The differences in the temperature dependence are explained by the flowchart. As one of results in theoretical analysis, the electron resistivity i. e. electron mobility is key point to elucidate the temperature dependence of laser-induced damage threshold.