Spatial distribution of edge states in the quantum Hall plateaus investigated by magnetocapacitance
Spatial distribution of edge states in the quantum Hall plateaus investigated by magnetocapacitance
复制标题
通过磁电容研究量子霍尔平台中边缘态的空间分布
DOI：
10.1103/physrevb.68.165347
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发表时间：
2003
影响因子：
3.7
通讯作者：
K. Murase
中科院分区：
文献类型：
--
作者：
K. Arai;S. Hashimoto;K. Oto;K. Murase
利用沿样品边界沿着排列的多栅细线测量的磁电容，研究了量子霍尔（QH）区边缘态的空间分布。我们已经观察到可压缩的电子态，存在约1\ensuremath {\mu}\mathrm{m}$沿着样品边界在QH制度。当负侧栅极偏压施加到最外侧栅极线时，边缘状态变得宽了几微米以上。
The spatial distribution of the edge states in the quantum Hall (QH) regime has been investigated by the magnetocapacitance measured with the multigate of thin wires along the sample boundary. We have observed the compressible electronic states which exist within about $1\ensuremath{\mu}\mathrm{m}$ along the sample boundary in the QH regime. The edge states become broad by more than a few microns when the negative side gate bias is applied to the outermost gate wire.