Quantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures
Quantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures
复制标题
N 极 GaN/AlGaN/GaN 异质结构中的量子电容
DOI：
10.1109/led.2012.2196973
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发表时间：
2012
影响因子：
4.9
通讯作者：
S. Rajan
中科院分区：
文献类型：
--
作者：
P. Park;D. Nath;S. Rajan
通过直接测量电子波函数Δd的量子位移，研究了N极GaN/AlGaN/GaN异质结中量子电容的影响。电学和显微镜测量的厚度的比较表明，倒置的高电子迁移率晶体管结构中存在负的量子位移效应。由于量子电容效应，从测量中提取了~-4 nm的量子位移Δd。用一维自洽薛定谔-泊松方程进行了进一步的分析，以验证测量数据。我们的模拟结果，包括多个子带占有率，解释了N极GaN基HEMT中测量的C-V分布中电容的增加。
We investigate the effects of quantum capacitance in an N-polar GaN/AlGaN/GaN heterostructures by directly measuring quantum displacement of the electron wavefunction Δd. A comparison between electrically and microscopically measured thicknesses showed negative quantum displacement effects in the inverted high-electron-mobility-transistor (HEMT) structure. As a result of the quantum capacitance effects, a quantum displacement Δd of ~ -4nm was extracted from the measurements. Further analysis using 1-D self-consistent Schrodinger-Poisson solver has been done to validate the measured data. Our simulation results, including multiple-subband occupancy, explain the increasing capacitance in the measured C-V profile in N-polar GaN-based HEMTs.