Electron spin resonance studies in β‐FeSi2 crystals
Electron spin resonance studies in β‐FeSi2 crystals
复制标题
β-FeSi2 晶体中的电子自旋共振研究
DOI：
10.1063/1.362967
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发表时间：
1996
影响因子：
3.2
通讯作者：
K. Sato
中科院分区：
文献类型：
--
作者：
I. Aksenov;H. Katsumata;Y. Makita;Y. Kimura;T. Shinzato;K. Sato
利用化学气相输运技术在130 ~ 300 K的温度范围内对半导体β - FeSi2单晶进行了电子自旋共振研究。探测到两个各向异性双偶，其表观g因子在2.025-2.05和1.98-2.03之间，以及一个各向同性g因子为2.0195的复杂信号，并表现出五线超精细结构。双重态信号被认为是由可能取代的Ni2+跃迁离子的自旋三重态（S=1）产生的，而显示超精细结构的信号则归因于被硅空位捕获的空穴的自旋，并与硅空位周围第一壳层中的四个铁原子的核自旋相互作用。
The electron spin resonance studies have been carried out in the temperature range 130–300 K on semiconducting β‐FeSi2 single crystals grown by a chemical vapor transport technique. Two anisotropic doublets with apparent g factors in the range 2.025–2.05 and 1.98–2.03, as well as one complex signal having an isotropic g factor of 2.0195 and exhibiting a five‐line hyperfine structure, have been detected. The doublet signals are believed to arise from spin triplet (S=1) states of, presumably, substitutional Ni2+ transition ions, whereas the signal exhibiting the hyperfine structure has been attributed to the spin of a hole, captured by silicon vacancy and interacting with nuclear spins of four iron atoms in the first shell surrounding of the silicon vacancy.