Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperature
Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperature
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使用 Ge 掺杂 SbTe 提高相变存储器件在不同环境温度下的稳定性
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
B. Cheong
中科院分区：
文献类型：
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作者：
Zhe Wu;Suyoun Lee;Y. Park;H. Ahn;D. Jeong;J. Jeong;K. No;B. Cheong
比较了Ge掺杂SbTe(Ge-ST)和Ge_2Sb_2Te_5(GST)在相变存储器中的潜在应用，并提高了它在环境温度(TA)下的稳定性。研究发现，Ge-ST器件的复位电流、复位电阻和置位电阻等器件特性随TA的变化明显小于GST器件。根据测量的载流子密度、迁移率和光学带隙，这些发现被解释为源于晶态Ge-ST的金属性，而不是晶态GST的半导性以及非晶态Ge-ST中相对较弱的共价键。
Ge-doped SbTe (Ge–ST) was compared with Ge2Sb2Te5 (GST) for its potential use in the phase-change memory with improved stability at varying ambient temperature (TA). Device characteristics such as RESET current, RESET resistance, and SET resistance of Ge–ST devices were found to vary significantly less with TA than those of GST devices. From measured carrier density, mobility, and optical band gaps, these findings are interpreted to derive from a metallic nature of the crystalline Ge–ST in contrast with a semiconducting nature of the crystalline GST as well as a relatively weaker covalent bonding in amorphous Ge–ST.