Selected-area small-angle electron diffraction
Selected-area small-angle electron diffraction
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选区小角度电子衍射
DOI：
10.1007/bf00562952
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发表时间：
1967
影响因子：
4.5
通讯作者：
P. Geil
中科院分区：
文献类型：
--
作者：
G. Yeh;P. Geil
选择区域的电子衍射能够分辨间隔高达2000 Å从一阶离散反射已经实现使用标准，双电容电子显微镜。该技术允许在足够的放大倍数下拍摄选定区域，从而产生小角度散射图案，此外还具有获得相关广角衍射以及广角和小角度暗场显微照片的正常能力。大多数，但不是全部，离散和扩散，小角度电子衍射研究的结果，来自各种各样的样品，包括拉伸，退火聚乙烯，乳胶颗粒，蒸发金颗粒，光栅复制品和狭缝边缘，已经在相应的电子显微图中观察到的结构的基础上得到了解释。发现小角电子衍射比小角x射线散射对散射中心填充物的缺陷更敏感。
Selected-area electron diffraction capable of resolving spacings up to 2000 Å from first-order discrete reflections has been achieved using a standard, double-condenser electron microscope. The technique allows photographing of the selected area, at sufficient magnification, that gives rise to the small-angle scattering pattern, in addition to the normal capabilities of obtaining related wide-angle diffraction and wide-angle and small-angle dark-field micrographs. Most, but not all, of the results of discrete and diffuse, small-angle electron diffraction studies from a large variety of specimens including drawn, annealed polyethylene, latex particles, evaporated gold particles, grating replicas, and slit edges have been explained on the basis of the structures observed in the corresponding electron micrographs. Small-angle electron diffraction is found to be more sensitive to defects in the packing of the scattering centres than small-angle X-ray scattering.