3100 V, asymmetrical, gate turn-off (GTO) thyristors in 4H-SiC
3100 V, asymmetrical, gate turn-off (GTO) thyristors in 4H-SiC
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DOI：
10.1109/55.910618
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发表时间：
2001-03
影响因子：
4.9
通讯作者：
S. Ryu;A. Agarwal;Ranbir Singh;J. Palmour
中科院分区：
文献类型：
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作者：
S. Ryu;A. Agarwal;Ranbir Singh;J. Palmour
报道了一种2 mm/spl次/2 mm、4 H-SiC、非对称npnp门极可关断（GTO）晶闸管，其阻断电压为3100 V，正向电流为12 A。这是SiC中单个器件的最高报告功率处理能力37 kW。5-外延层结构使用50 μ/m厚的阻挡层，p型，掺杂约7-9 μ/m × 10/ cm/sup-3/。该器件用通过在650/spl deg/C下离子注入氮形成的单区结终止延伸（JTE）区终止。该器件能够可靠地导通和关断20 A（500 A/cm/sup 2/）的阳极电流，导通增益（I/sub K//I/sub G，on/）为20，关断增益（I/sub K//I/sub G，off/）为3.3。
A 2-mm/spl times/2-mm, 4H-SiC, asymmetrical npnp gate turn-off (GTO) thyristor with a blocking voltage of 3100 V and a forward current of 12 A is reported. This is the highest reported power handling capability of 37 kW for a single device in SiC. The 5-epilayer structure utilized a blocking layer that was 50 /spl mu/m thick, p-type, doped at about 7-9/spl times/10/sup 14/ cm/sup -3/. The devices were terminated with a single zone junction termination extension (JTE) region formed by ion-implantation of nitrogen at 650/spl deg/C. The device was able to reliably turn-on and turn-off 20 A (500 A/cm/sup 2/) of anode current with a turn-on gain (I/sub K//I/sub G, on/) of 20 and a turn-off gain (I/sub K//I/sub G, off/) of 3.3.