Mobility Enhancement by Back-Gate Biasing in Ultrathin SOI MOSFETs With Thin BOX
Mobility Enhancement by Back-Gate Biasing in Ultrathin SOI MOSFETs With Thin BOX
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DOI：
10.1109/led.2011.2181816
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发表时间：
2012-03-01
影响因子：
4.9
通讯作者：
Cristoloveanu, S.
中科院分区：
文献类型：
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作者：
Ohata, A.;Bae, Y.;Cristoloveanu, S.
研究了n沟和p沟超薄(8 Nm)SOI MOSFET在不同背栅偏压下的载流子迁移率(Mu)。我们发现，无论是薄盒结构还是GP结构，Mu都没有恶化，甚至在后通道(BC)中也是如此。我们还发现，在p沟道器件中，背栅偏压具有最大的µ增强效应。由于这种增强效应可以掩盖Si/SiO_2界面处的优势µ，因此当前向沟道和BC都导通时，Mu达到最大。相比之下，只有当BC被激活时，n通道器件中的Mu才最大化。P沟道器件中的这种大的µ增益有望用于进一步的cmos比例调整。
Carrier mobility (mu) at various back-gate biases is studied for n- and p-channel ultrathin (8 nm) SOI MOSFETs with thin (10 nm) buried oxide (BOX) and ground plane (GP). We found that mu did not deteriorate for either thin BOX or GP structure, even in the back channel (BC). We also found the largest mu enhancement effect in p-channel devices by the back-gate bias. As this enhancement effect could conceal the superior mu at the Si/SiO2 interface, mu was maximized when both the front channel and BC were conducting. By contrast, mu in n-channel devices was maximized only when the BC was activated. This large mu gain in p-channel devices is promising for further CMOS scaling.