Loss characteristics of silicon substrate with different resistivities
Loss characteristics of silicon substrate with different resistivities
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DOI：
10.1002/mop.21786
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发表时间：
2006-09
影响因子：
1.5
通讯作者：
Ru‐Yuan Yang;C. Hung;Y. Su;M. Weng;Hung-Wei Wu
中科院分区：
文献类型：
--
作者：
Ru‐Yuan Yang;C. Hung;Y. Su;M. Weng;Hung-Wei Wu
In the design of high‐speed and high frequency IC's, the influence of the substrate on the circuit performance must be considered carefully. This work investigates the loss characteristic of silicon substrate with different resistivities and distinguishes theoretically and experimentally the dielectric losses into the intrinsic loss of silicon (tan δD) and the extrinsic substrate leakage loss (tan δL) caused by the finite conductivity of the substrate. The dielectric relaxation (cut off) frequency as a function of silicon substrate resistivity are calculated as considering the conditions of substrate noise isolation and RF passive device design. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1773–1776, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21786
