Suppression of stress-induced voiding in copper interconnects

Suppression of stress-induced voiding in copper interconnects
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抑制铜互连中应力引起的空洞

DOI:
10.1109/iedm.2002.1175948
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发表时间:
2002
期刊:
Digest. International Electron Devices Meeting,
影响因子:
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通讯作者:
T. Iwasaki
T. Iwasaki
中科院分区:
--
文献类型:
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作者:
T. Oshima;K. Hinode;H. Yamaguchi;H. Aoki;K. Torii;T. Saito;K. Ishikawa;J. Noguchi;M. Fukui;T. Nakamura;S. Uno;K. Tsugane;J. Murata;K. Kikushima;H. Sekisaka;E. Murakami;K. Okuyama;T. Iwasaki

文献摘要

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相似文献

研究了在低于250/spl deg/C的温度范围内Cu互连线中应力诱导的空洞化,发现了两种不同的空洞化模式。一种模式发生在上面具有宽导线的通孔内部,并且可以通过优化通孔形状和通孔清洁工艺来抑制。另一种模式发生在下面具有宽导线的通孔下,并且可以通过增加Cu晶粒尺寸和改善阻挡金属与Cu的粘附来抑制。
Studied stress-induced voiding in Cu interconnects in the temperature range below 250/spl deg/C, and found two different voiding modes. One mode occurs inside a via having wide wire above it, and can be suppressed by optimizing the via shape and the via-cleaning process. The other mode occurs under a via having wide wire below it and can be suppressed by increasing the Cu grain size and improving the adhesion of the barrier metal with Cu.