Characterization of flexible low-dielectric constant carbon-doped oxide (SiCOH) thin films under repeated mechanical bending stress
Characterization of flexible low-dielectric constant carbon-doped oxide (SiCOH) thin films under repeated mechanical bending stress
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DOI：
10.1007/s10853-022-07987-y
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发表时间：
2022-11
影响因子：
4.5
通讯作者：
William Wirth;Jacob Comeaux;Seonhee Jang
中科院分区：
文献类型：
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作者：
William Wirth;Jacob Comeaux;Seonhee Jang
采用等离子体增强化学气相沉积（PECVD）技术，以四（三甲基硅氧基）硅烷为前驱体，在室温下，以20 ~ 100 W的等离子体功率在ITO/PEN柔性衬底上沉积了柔性低介电常数（low-k，k< 4.0）SiCOH薄膜。原始的SiCOH膜具有高达9.1 GPa的机械强度和低k值，低至2.00，并且它们是透明的、光滑的和疏水的。随着等离子体功率的增加，存在低氧化物结构的增加、密度的增加和甲基浓度的降低。在20-60 W的较低等离子体功率范围内，由于亚氧化物结构的增加，k值随着等离子体功率的增加而减小。在60-100 W的较高等离子体功率范围内，由于甲基浓度降低和密度增加，k值随着等离子体功率增加而增加。力学性能随着等离子体功率的增加而提高。在弯曲循环高达10，000次的重复机械弯曲测试中，柔性SiCOH膜保持其透明度、光滑度和疏水性，并显示出低于4.0的稳定值。FTIR光谱没有显著变化，并且在膜中没有观察到裂纹或分层。SiCOH薄膜在反复机械弯曲下表现出稳定的物理、化学和电学性能。
Flexible low-dielectric constant (low-k,k< 4.0) SiCOH films were deposited onto ITO/PEN flexible substrates by plasma-enhanced chemical vapor deposition of tetrakis(trimethylsilyloxy)silane precursor at room temperature with plasma powers from 20 to 100 W. The pristine SiCOH films had a mechanical strength up to 9.1 GPa and a lowk-value down to 2.00, and they were transparent, smooth, and hydrophobic. As the plasma power increased, there were an increase in the suboxide structure, increase in density, and decrease in the methyl group concentration. In the lower plasma power regime of 20–60 W, thek-value decreased as the plasma power increased due to the increased suboxide structure. In the higher plasma power regime of 60–100 W, thek-value increased as the plasma power increased due to the decreased methyl concentration and increased density. The mechanical properties increased as the plasma power increased. Upon repeated mechanical bending tests with bending cycles up to 10,000, the flexible SiCOH films maintained their transparency, smoothness, and hydrophobicity and showed a stablek-value below 4.0. There were no significant changes in the FTIR spectra and no cracks or delamination observed in the films. The SiCOH films showed stable physical, chemical, and electrical properties under the repeated mechanical bending.