Pressure behavior of beryllium-acceptor level in gallium nitride
Pressure behavior of beryllium-acceptor level in gallium nitride
复制标题
氮化镓中铍受体水平的压力行为
DOI：
10.1063/1.1845581
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发表时间：
2005
影响因子：
3.2
通讯作者：
E. Calleja
中科院分区：
文献类型：
--
作者：
H. Teisseyre;I. Gorczyca;N. Christensen;A. Svane;F. Naranjo;E. Calleja
铍是一种很有前途的掺杂剂，用于获得有效的p型导电性的GaN。本文报道了高压下掺Be的GaN样品在3.39eV处的施主-受主对（DAP）光致发光谱线的研究，以及GaN：Be在高压下的电子结构的从头计算。该分析证实了参与DAP光致发光的Be-受体状态的形成。发现GaN中Mg受主态和Be受主态具有不同的性质，Be能级在带隙中比Mg能级低100- 140 meV，其压力系数比Mg低3- 4 meVscinGPa。
Beryllium is a promising dopant for obtaining an efficient p-type conductivity of GaN. A high-pressure study of the donor-acceptor-pair (DAP) photoluminescence line at 3.39eV in Be-doped GaN samples is reported, together with ab initio calculations of the electronic structure of GaN:Be under pressure. The analysis confirms the formation of a Be-acceptor state which is involved in the DAP photoluminescence. Different properties of the Mg- and the Be-acceptor states in GaN are found. The Be level is located ∼100–140meV lower in the band gap than that of Mg, and its pressure coefficient is lower by approximately 3–4meV∕GPa.