Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
复制标题
表面具有单个狄拉克锥的大间隙拓扑绝缘体类的观察
DOI：
10.1038/nphys1274
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发表时间：
2009-06-01
期刊：
影响因子：
19.6
通讯作者：
Hasan, M. Z.
中科院分区：
文献类型：
--
作者：
Xia, Y.;Qian, D.;Hasan, M. Z.
Recent experiments and theories have suggested that strong spin-orbit coupling effects in certain band insulators can give rise to a new phase of quantum matter, the so-called topological insulator, which can show macroscopic quantum-entanglement effects(1-7). Such systems feature two-dimensional surface states whose electrodynamic properties are described not by the conventional Maxwell equations but rather by an attached axion field, originally proposed to describe interacting quarks(8-15). It has been proposed that a topological insulator(2) with a single Dirac cone interfaced with a superconductor can form the most elementary unit for performing fault-tolerant quantum computation(14). Here we present an angle-resolved photoemission spectroscopy study that reveals the first observation of such a topological state of matter featuring a single surface Dirac cone realized in the naturally occurring Bi2Se3 class of materials. Our results, supported by our theoretical calculations, demonstrate that undoped Bi2Se3 can serve as the parent matrix compound for the long-sought topological device where in-plane carrier transport would have a purely quantum topological origin. Our study further suggests that the undoped compound reached via n-to-p doping should show topological transport phenomena even at room temperature.
