245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment
245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment
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DOI：
10.1109/led.2011.2132751
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发表时间：
2011-06-01
影响因子：
4.9
通讯作者：
Palacios, Tomas
中科院分区：
文献类型：
--
作者：
Lee, Dong Seup;Chung, Jinwook W.;Palacios, Tomas
本文报道了在SiC衬底上制备的晶格匹配的In0.17Al0.83N/GaN高电子迁移率晶体管，其电流增益截止频率（f（T））达到创纪录的水平。这种性能的关键是使用氧等离子体处理，以形成一个薄的氧化层上的InAlN屏障，并减少栅极漏电流超过两个数量级。此外，在经O-2处理的器件中，RF_f（g（m））塌陷减少，这导致f（T）的显著改善。在栅极长度为30 nm的晶体管中，实现了245 GHz的f（T），这是GaN基场效应晶体管中有史以来报道的最高值。
We report lattice-matched In0.17Al0.83N/GaN high-electron mobility transistors on a SiC substrate with a record current gain cutoff frequency (f(T)). The key to this performance is the use of an oxygen plasma treatment to form a thin oxide layer on the InAlN barrier and to reduce the gate leakage current by more than two orders of magnitude. In addition, the RF transconductance (g(m)) collapse is reduced in the O-2-treated devices, which results in a significant improvement in the f(T). In a transistor with a gate length of 30 nm, an f(T) of 245 GHz is achieved, the highest value ever reported in GaN-based field-effect transistors.