Revealing and reducing the possible recombination loss within TiO2 compact layer by incorporating MgO layer in perovskite solar cells
Revealing and reducing the possible recombination loss within TiO2 compact layer by incorporating MgO layer in perovskite solar cells
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DOI：
10.1016/j.solener.2016.07.019
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发表时间：
2016-10-15
期刊：
影响因子：
6.7
通讯作者：
Miyasaka, Tsutomu
中科院分区：
文献类型：
--
作者：
Kulkarni, Ashish;Jena, Ajay K.;Miyasaka, Tsutomu
在这里，我们报告了钙钛矿型太阳能电池开路电压(Vac)损失的来源，这是由于广泛使用的二氧化钛致密层(CL)内及其与FTO衬底的界面可能存在陷阱辅助复合。用氧化镁薄层(TL)研究了复合机理。MGO替代TiO2CL(50-60 nm)显着提高了电池的伏安比，而包覆在TiO2CL(TiO2MgO双层)上的MgO层对伏安比变化不大。结合开路电压衰减(OCVD)测量，我们揭示了FTO/TiO2界面上的复合是影响TiO2基钙钛矿型太阳电池电压和效率的主要因素。(C)2016爱思唯尔有限公司。保留所有权利。
Here, we report an origin of loss in open circuit voltage (Vac) in perovskite solar cells due to the possible trap-assisted recombination within the widely used TiO2 compact layer (CL) and at its interface with FTO substrate. A thin layer (TL) of MgO was employed to investigate the recombination mechanism. MgO in place of TiO2 CL (50-60 nm) enhances V-oc of the cell significantly while the MgO layer coated on TiO2 CL (TiO2-MgO bilayer) does not change the V-oc much. In combination with open-circuit voltage decay (OCVD) measurements, we reveal that recombination at FTO/TiO2 interface is a major factor regulating the voltage and efficiency of TiO2-based perovskite solar cells. (C) 2016 Elsevier Ltd. All rights reserved.