Advanced CPP-GMR Spin-Valve Sensors for Narrow Reader Applications
Advanced CPP-GMR Spin-Valve Sensors for Narrow Reader Applications
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DOI：
10.1109/tmag.2017.2753221
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发表时间：
2018-02-01
影响因子：
2.1
通讯作者：
Hono, Kazuhiro
中科院分区：
文献类型：
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作者：
Nakatani, Tomoya;Li, Songtian;Hono, Kazuhiro
在不久的将来，具有辅助记录技术的超高密度磁记录需要对读头技术进行实质性的改进。为了实现低误码率和高空间分辨率的读取，需要具有较小的传感器电阻面积积（RA）、较大的磁阻比（R /R）和较薄的传感器总厚度。利用高自旋极化的Heusler合金铁磁层，制备了导电电子自旋极化β接近0.8的电流垂直于平面的巨磁阻传感器。采用基于Ag90Sn10 （AgSn）合金的传统金属间隔层的实际底钉式自旋阀结构，获得了较大的δ R/R，最高可达14%。用导电的氧化基AgSn/InZnO双分子层代替间隔层，在RA值接近0.1 Omega时，δ R/R可达32%。Mu m(2)，这是读取传感器应用的最佳选择。在100 mV的偏置电压下，传感器的利用率接近33%，可获得高达6 mV的大电压输出。
The near-future ultra-high-density magnetic recording with an assist recording technology requires a substantial evolution of the read-head technology. A read sensor with a small sensor resistance-area product (RA), a large magnetoresistance ratio (Delta R/R), and a thin total sensor thickness is required for the low bit error rate and high-spatial resolution of reading. We developed currentperpendicular- to-plane giant magnetoresistance sensors using highly spin-polarized Heusler alloy ferromagnetic layers with the spin polarization of the conducting electron beta similar to 0.8. A reasonably large Delta R/R up to 14% was obtained by a practical bottom-pinned spin-valve structure with a conventional metallic spacer layer of an Ag90Sn10 (AgSn) alloy. By replacing the spacer layer with a conductive oxide-based AgSn/InZnO bilayer, a large Delta R/R up to 32% was realized at RA value of similar to 0.1 Omega . mu m(2), which is optimal for the read sensor application. A large voltage output up to 6 mV was obtained for a sensor utilization of similar to 33% at a bias voltage of 100 mV.