Local order origin of thermal stability enhancement in amorphous Ag doping GeTe
Local order origin of thermal stability enhancement in amorphous Ag doping GeTe
复制标题
非晶Ag掺杂GeTe热稳定性增强的局域有序起源
DOI：
10.1063/1.4906332
复制
发表时间：
2015
影响因子：
4
通讯作者：
Miao X. S.
中科院分区：
文献类型：
--
作者：
Xu L.;Li Y.;Yu N. N.;Zhong Y. P.;Miao X. S.
研究了Ag掺杂对非晶GeTe相变材料局域原子结构的影响。通过拉曼光谱、X射线光电子能谱和从头算计算，揭示了声子振动模式、键合性质和原子结构的变化。结合实验和模拟，我们观察到八面体位置的Ge原子数减少，四面体位置的Ge原子数增加。通过差示扫描量热法和透射电子显微镜的研究，证实了低价元素对GeTe的局域有序修饰会影响非晶GeTe的晶化行为。本工作不仅分析了掺银对GeTe相变材料结构的影响，而且为提高非晶相变材料的热稳定性提供了一种方法，可用于存储和脑启发计算等领域。
We demonstrate the impacts of Ag doping on the local atomic structure of amorphous GeTe phase-change material. The variations of phonon vibrational modes, boding nature, and atomic structure are shown by Raman, X-ray photoelectron spectroscopy, and ab initio calculation. Combining the experiments and simulations, we observe that the number of Ge atoms in octahedral site decreases and that in tetrahedral site increases. This modification in local order of GeTe originating from the low valence element will affect the crystallization behavior of amorphous GeTe, which is verified by differential scanning calorimetry and transmission electron microscope results. This work not only gives the analysis on the structural change of GeTe with Ag dopants but also provides a method to enhance the thermal stability of amorphous phase-change materials for memory and brain-inspired computing applications.