A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
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DOI：
10.1016/j.mee.2015.04.067
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发表时间：
2015-11
影响因子：
2.3
通讯作者：
Sung-Jin Cho;J. W. Roberts;I. Guiney;Xu Li;G. Ternent;K. Floros;C. Humphreys;P. Chalker;I. Thayne
中科院分区：
文献类型：
--
作者：
Sung-Jin Cho;J. W. Roberts;I. Guiney;Xu Li;G. Ternent;K. Floros;C. Humphreys;P. Chalker;I. Thayne
