Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity
Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity
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DOI：
10.1088/1361-6528/aad798
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发表时间：
2018-10-19
期刊：
影响因子：
3.5
通讯作者：
Radu, Iuliana
中科院分区：
文献类型：
--
作者：
Chiappe, Daniele;Ludwig, Jonathan;Radu, Iuliana
MOSFET规模化的快速发展刺激了新技术的发展，并加速了新半导体材料作为硅替代品的引入。在这种背景下，具有独特的层状结构的二维材料近年来引起了人们的极大兴趣，主要是因为它们具有超薄体的性质和独特的光电和机械性能。可伸缩合成技术的发展显然是迈向可制造技术发展的基本步骤。金属-有机化学气相沉积技术最近已被用于大面积TMD的合成，然而，仍需要实现一个重要的里程碑：能够精确地控制纳米到微米级的层数和表面均匀度，以获得原子平坦的自钝化表面。在这项工作中，我们探索了化学气相沉积过程中涉及的各个基本方面，并对外延MoS_2薄膜的结构特性的层相关性提供了重要的见解。基于这些观察结果，我们提出了一种新颖的方法来实现晶片尺度的TMD的层控外延。
The rapid cadence of MOSFET scaling is stimulating the development of new technologies and accelerating the introduction of new semiconducting materials as silicon alternative. In this context, 2D materials with a unique layered structure have attracted tremendous interest in recent years, mainly motivated by their ultra-thin body nature and unique optoelectronic and mechanical properties. The development of scalable synthesis techniques is obviously a fundamental step towards the development of a manufacturable technology. Metal-organic chemical vapor deposition has recently been used for the synthesis of large area TMDs, however, an important milestone still needs to be achieved: the ability to precisely control the number of layers and surface uniformity at the nano-to micro-length scale to obtain an atomically flat, self-passivated surface. In this work, we explore various fundamental aspects involved in the chemical vapor deposition process and we provide important insights on the layer-dependence of epitaxial MoS2 film's structural properties. Based on these observations, we propose an original method to achieve a layer-controlled epitaxy of wafer-scale TMDs.