Weak localization in monolayer and bilayer graphene
Weak localization in monolayer and bilayer graphene
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DOI：
10.1098/rsta.2007.2159
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发表时间：
2008-01
期刊：
影响因子：
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通讯作者：
D. Horsell;F. Tikhonenko;R. Gorbachev;A. K. Savchenko
中科院分区：
文献类型：
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作者：
D. Horsell;F. Tikhonenko;R. Gorbachev;A. K. Savchenko
我们证明了单层和双层石墨烯体系中电导的弱局域化修正的定量实验证据。我们展示了谷间和谷内弹性散射如何以一种石墨烯独有的方式控制小磁场中的校正。在这两个系统中观察到了明显不同的修正形式，这表明了弹性散射机制之间相互作用的重要性以及如何区分它们。我们在两个系统中观察到的零净载流子浓度的校正是由无序产生的石墨烯层不均匀的明显证据。
We demonstrate quantitative experimental evidence for a weak localization correction to the conductivity in monolayer and bilayer graphene systems. We show how inter- and intra-valley elastic scattering control the correction in small magnetic fields in a way which is unique to graphene. A clear difference in the forms of the correction is observed in the two systems, which shows the importance of the interplay between the elastic scattering mechanisms and how they can be distinguished. Our observation of the correction at zero-net carrier concentration in both systems is clear evidence of the inhomogeneity engendered into the graphene layers by disorder.