Silicon Oxycarbide Accelerated Chemical Vapor Deposition of Graphitic Networks on Ceramic Substrates for Thermal Management Enhancement
Silicon Oxycarbide Accelerated Chemical Vapor Deposition of Graphitic Networks on Ceramic Substrates for Thermal Management Enhancement
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DOI：
10.1021/acsanm.8b01998
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发表时间：
2019-01-01
影响因子：
5.9
通讯作者：
Lee, L. James
中科院分区：
文献类型：
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作者：
Garman, Paul D.;Johnson, Jared M.;Lee, L. James
陶瓷材料如氧化铝（Al2O3）和氮化铝（AlN）通常作为各种应用的散热器。然而，这些陶瓷的导热性太低，无法作为电力电子应用中有效的热管理材料。石墨薄膜具有较高的横向导热系数，是提高陶瓷热管理能力的理想材料。目前的直接化学气相沉积（CVD）方法只能在陶瓷衬底上生长几层石墨烯，并且与衬底的附着力很差。我们演示了一种简单的常压化学气相沉积（APCVD）方法，利用双氧化碳化硅（SiOC）源直接在陶瓷表面沉积微米尺度的石墨网络。石墨网络对氧化铝具有良好的附着力，可以提供足够的热质量，并具有优越的热传递性能，可以有效地增强陶瓷基板的热管理。
Ceramic materials such as aluminum oxide (Al2O3) and aluminum nitride (AlN) are commonly implemented as heat sinks for a variety of applications. However, the thermal conductivity of these ceramics is too low to act as effective thermal management materials in power electronics applications. With high lateral thermal conductivity, graphitic films would be ideal materials to enhance the thermal management abilities of ceramics. Current direct chemical vapor deposition (CVD) methods can only grow several layers of graphene on ceramic substrates with poor adhesion to the substrate. We demonstrate a simple atmospheric pressure chemical vapor deposition (APCVD) method to deposit micrometerscale graphitic networks directly on the surface of ceramics making use of dual silicon oxycarbide (SiOC) sources. The graphitic networks have good adhesion to aluminum oxide and can provide sufficient thermal mass combined with superior hear transfer properties for effective thermal management enhancement of ceramic substrates.