Development of Deposition Technique for PZT Thin Film Actuator in MEMS
Development of Deposition Technique for PZT Thin Film Actuator in MEMS
复制标题
MEMS中PZT薄膜致动器沉积技术的发展
DOI：
10.1299/kikaia.69.1601
复制
发表时间：
2003
期刊：
影响因子：
--
通讯作者：
E. Nakamachi
中科院分区：
文献类型：
--
作者：
K. Tsuchiya;T. Kitagawa;Yuji Okuda;E. Nakamachi
由于Pb(Zr, Ti)O3压电材料（PZT）具有比其他压电材料（如BaTiO3）更高的功率和更大的位移，已被用于微致动器或微传感器。但是，寻找超薄薄膜致动器的最佳材料工艺仍然存在困难。在本研究中，利用高温射频磁控溅射装置将PZT薄膜沉积在加热的因瓦尔合金衬底上。当使用陶瓷靶材时，基底与靶材的相对位置以及温度、气体流速、靶材的组成等因素对薄膜的沉积速率和晶体结构有强烈的影响。我们发现衬底相对于目标的最佳位置具有高沉积速率和最佳晶体结构，例如在径向上距离目标中心40 ~ 70%的距离内。用XRD测定了该区域沉积的PZT的晶体结构。观察到晶面（110）PZT钙钛矿结构强度最大。
Pb(Zr, Ti)O3 piezoelectic material (PZT) has been utilized for a microactuators or microsensors, because of a higher power and a larger displacement than the other piezoelectric materials such as BaTiO3. But, there remains the difficulty to find a best materil process of a very thin film actuator. In this study, PZT thin films were deposited onto a heated Invar alloy substrate by using a high temperature RF magnetron sputtering appoaratus. When the ceramic target is used, the deposition rate and crystal structure of the film has strongly affected by the position of substrate against the target, as well as the temperature, the gas flow rate, the composition of target, and so on. We found the best position of substrate against the target to have a high-deposition rate and an optimum crystal structure, such as within 40∼70% distance from a center of the target in the radial direction. The crystalline structure of deposited PZT in this region was also measured by XRD. The largest intensity of crystal plane (110) PZT Perovskite structure was observed.