Mn12 Molecular Redox Array Exhibiting One-Dimensional Coulomb Blockade Behavior
Mn12 Molecular Redox Array Exhibiting One-Dimensional Coulomb Blockade Behavior
复制标题
Mn12 分子氧化还原阵列表现出一维库仑封锁行为
DOI：
10.1021/jp301778r
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发表时间：
2012
期刊：
影响因子：
3.7
通讯作者：
T.Matsumoto
中科院分区：
文献类型：
--
作者：
Y.Hirano;Y.Segawa;F.Yamada;T.Kuroda-Sowa;T.Kawai;T.Matsumoto
发现Mn_（12）{[Mn_（12）O_（12）（O_2CC_6H_5）_（12）（O_2CC_6H_4NH_2）_4（H_2O）_4]·2（CH_2Cl_2）}分子氧化还原阵列在10 ~ 300 K温度范围内具有非线性的电流-电压特性。其中，在10 ~ 80 K范围内，I-V特性随阈值电压（Vth）的变化很明显。I-V曲线与Vth的关系可用一维库仑阻塞（CB）模型拟合。在10 K时，Vth为280 mV，随温度的升高而线性下降。这些结果表明，在80 K或更低的温度下，每个Mn 12在1D阵列中充当CB元素。因此，Mn 12分子氧化还原体系可以用CB行为来描述。
We have found that nonlinear current–voltage characteristics (I–Vcurves) are observed in the Mn12{[Mn12O12(O2CC6H5)12(O2CC6H4NH2)4(H2O)4]·2(CH2Cl2)} molecular redox array in the temperature range from 10 to 300 K. Among them,I–Vcharacteristics with threshold voltages (Vth) are clearly observed from 10 to 80 K. TheI–Vcurves withVthcan be well fitted by applying the one-dimensional (1D) Coulomb blockade (CB) model. TheVthvalue is 280 mV at 10 K and decreases linearly with increasing temperature. These results indicate that each Mn12acts as a CB element in the 1D array at 80 K or below. Thus, it is suggested that the Mn12molecular redox system can be described by the CB behavior.