Observation of Magnetoresistance in CrI3/Graphene van der Waals Heterostructures
Observation of Magnetoresistance in CrI3/Graphene van der Waals Heterostructures
复制标题
CrI3/石墨烯范德华异质结构中磁阻的观察
DOI：
10.1088/1674-1056/ac1e1d
复制
发表时间：
2021-08
影响因子：
1.7
通讯作者：
Bo Peng
中科院分区：
文献类型：
--
作者：
Yu Ting Niu;Xiao Lu;Zhongtai Shi;Bo Peng
二维铁磁货车德瓦尔斯（2D vdW）异质结构为创造具有前所未有的电学和光学功能的人工材料开辟了新的途径，这些功能超出了孤立的2D原子层状材料的范围，并且用于在几个原子层的极限下操纵自旋自由度，这使得下一代自旋电子器件和存储器件成为可能。然而，到目前为止，二维铁磁异质结构的电子特性仍然是难以捉摸的。在这里，我们报告了一个明确的磁阻行为在CrI3/石墨烯异质结构，最大磁阻比为2.8%。磁电阻随外加磁场的增大而增大，通过洛仑兹力使载流子浓度减小，随偏压的增大而减小。本工作突出了二维铁磁vdW异质结构在自旋电子学和存储器件中应用的特点。
Two-dimensional ferromagnetic van der Waals (2D vdW) heterostructures have opened new avenues for creating artificial materials with unprecedented electrical and optical functions beyond the reach of isolated 2D atomic layered materials, and for manipulating spin degree of freedom at the limit of few atomic layers, which empower next-generation spintronic and memory devices. However, to date, the electronic properties of 2D ferromagnetic heterostructures still remain elusive. Here, we report an unambiguous magnetoresistance behavior in CrI 3/graphene heterostructures, with a maximum magnetoresistance ratio of 2.8%. The magnetoresistance increases with increasing magnetic field, which leads to decreasing carrier densities through Lorentz force, and decreases with the increase of the bias voltage. This work highlights the feasibilities of applying two-dimensional ferromagnetic vdW heterostructures in spintronic and memory devices.