Hydrogen diffusion and the catalysis of enhanced oxygen diffusion in silicon at temperatures below 500 °C
Hydrogen diffusion and the catalysis of enhanced oxygen diffusion in silicon at temperatures below 500 °C
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DOI：
10.1063/1.349338
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发表时间：
1991-09
影响因子：
3.2
通讯作者：
R. Newman;J. Tucker;A. Brown;S. Mcquaid
中科院分区：
文献类型：
--
作者：
R. Newman;J. Tucker;A. Brown;S. Mcquaid
本文研究了直拉硅在氢等离子体中浸泡不同温度等温退火后，9-μm氧红外吸收带的应力诱导二向色性的弛豫。氢原子的内扩散加快了氧的扩散速度，使样品外表面的二向色性逐渐丧失。综合的辅助测量表明，氧扩散跳跃是由与扩散氢原子的碰撞催化的，而不是由其他一些快速扩散的物种催化的。测量结果表明，在所研究的温度范围内，氢的扩散系数估计为1.7×102exp(−1.2 eV/kT)cm~2 S−_1。由于增强了长程氧扩散，热施主的形成速度也得到了提高。这些新数据与以前的报道有关，即在直拉硅单晶中发现，由于生长后在氢气中进行热处理，氧扩散跳跃得到了增强。
The relaxation of stress‐induced dichroism of the 9‐μm oxygen infrared absorption band has been investigated for Czochralski silicon annealed isothermally at various temperatures in the range 225–350 °C while the material was immersed in a hydrogen plasma. The in‐diffusion of hydrogen atoms enhanced the rate of oxygen diffusion so that the dichroism was lost progressively from the external surfaces of samples. Comprehensive ancillary measurements demonstrated that the oxygen diffusion jumps were catalyzed by collisions with diffusing hydrogen atoms, rather than some other fast‐diffusing species. The measurements allowed the hydrogen diffusion coefficient to be estimated as 1.7 × 102 exp( − 1.2 eV/kT) cm2 s−1 for the range of temperatures investigated. Increased rates of thermal donor formation were also found due to enhanced long‐range oxygen diffusion. The new data are related to previous reports of enhanced oxygen diffusion jumps found in Czochralski silicon given post‐growth heat treatments in hydrogen...