Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorods
Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorods
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DOI：
10.1016/j.ssc.2009.08.001
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发表时间：
2009-11
影响因子：
2.1
通讯作者：
Bi Zhou;S. Pan;Rui Chen;Songyan Chen;Cheng Li;H. Lai;Jia-Wei Yu;Xianfang Zhu
中科院分区：
文献类型：
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作者：
Bi Zhou;S. Pan;Rui Chen;Songyan Chen;Cheng Li;H. Lai;Jia-Wei Yu;Xianfang Zhu
