Electrical properties of MOCVD-grown GaN on Si (111) substrates with low-temperature AlN interlayers
Electrical properties of MOCVD-grown GaN on Si (111) substrates with low-temperature AlN interlayers
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DOI：
10.1088/1674-1056/22/8/088104
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发表时间：
2013-08
影响因子：
1.7
通讯作者：
Y. Ni;Zhiyuan He;J. Zhong;Yao Yao-Yao;Fan Yang;P. Xiang;Baijun Zhang;Yang Liu
中科院分区：
文献类型：
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作者：
Y. Ni;Zhiyuan He;J. Zhong;Yao Yao-Yao;Fan Yang;P. Xiang;Baijun Zhang;Yang Liu
研究了用金属-有机化学气相沉积方法在具有低温AlN中间层的Si(111)衬底上生长的GaN结构的电学性质。通过霍尔效应测量，在我们的GaN-on-Si结构中观察到了反常的P型电导，这主要是由于Al原子扩散到Si衬底中而起到受主掺杂的作用。同时，在LT-AlN中观察到一个恒定的n型导电沟道，它在低温(50K)下引起导电型转变，并可能进一步影响该结构的电学行为。
The electrical properties of the structure of GaN grown on an Si (111) substrate with low-temperature (LT) AlN interlayers by metal—organic chemical-vapour deposition are investigated. An abnormal P-type conduction is observed in our GaN-on-Si structure by Hall effect measurement, which is mainly due to the Al atom diffusing into the Si substrate and acting as an acceptor dopant. Meanwhile, a constant n-type conduction channel is observed in LT-AlN, which causes a conduction-type conversion at low temperature (50 K) and may further influence the electrical behavior of this structure.