Spontaneous Silver Doping and Surface Passivation of CsPbI(3) Perovskite Active Layer Enable Light-Emitting Devices with an External Quantum Efficiency of 11.2.
Spontaneous Silver Doping and Surface Passivation of CsPbI(3) Perovskite Active Layer Enable Light-Emitting Devices with an External Quantum Efficiency of 11.2.
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自发%20Silver%20Doping%20and%20Surface%20Passivation%20of%20CsPbI3%20Perovskite%20Active%20Layer%20Enable%20Light-Emitting%20Devices%20with%20an%20External%20Quantum%20Efficiency%20of%2011.2%
DOI：
10.1021/acsenergylett.8b00835
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发表时间：
2018-07-13
影响因子：
22
通讯作者：
Rogach AL
中科院分区：
文献类型：
--
作者：
Lu M;Zhang X;Bai X;Wu H;Shen X;Zhang Y;Zhang W;Zheng W;Song H;Yu WW;Rogach AL
卤化铅钙钛矿纳米晶体作为溶液处理发光器件（LED）的组成部分，目前正在进行深入研究。我们展示了基于Ag掺杂钝化的CsPbI3钙钛矿纳米晶体的LED，其具有11.2%的外量子效率和改进的稳定性。阴极和阳极分别采用Ag和MoO3/Au/MoO3三层结构，既降低了电子注入势垒，又保证了阳极的高透明性和低电阻。银离子扩散到钙钛矿膜从银电极，确认元素映射，在X射线光电子能谱中的Ag 3d峰的存在下，和CsPbI3的X射线衍射图案中的峰位移。除了掺杂外，银离子还起到钝化CsPbI 3纳米晶表面缺陷态的有益作用，从而提高光致发光量子产率、延长发射寿命并提高钙钛矿薄膜的稳定性。
Lead halide perovskite nanocrystals are currently under intense investigation as components of solution-processed light-emitting devices (LEDs). We demonstrate LEDs based on Ag doped–passivated CsPbI3 perovskite nanocrystals with external quantum efficiency of 11.2% and an improved stability. Ag and trilayer MoO3/Au/MoO3 structure were used as cathode and anode, respectively, which reduce the electron injection barrier and ensure the high transparency and low resistance of the anode. Silver ions diffuse into perovskite film from the Ag electrode, as confirmed by the elemental mapping, the presence of Ag 3d peaks in the X-ray photoelectron spectrum, and the peak shift in the X-ray diffraction patterns of CsPbI3. In addition to doping, silver ions play the beneficial role of passivating surface defect states of CsPbI3 nanocrystals, which results in increased photoluminescence quantum yield, elongated emission lifetime, and improved stability of perovskite films.
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影响因子：
15
作者：
van der Stam W;Geuchies JJ;Altantzis T;van den Bos KH;Meeldijk JD;Van Aert S;Bals S;Vanmaekelbergh D;de Mello Donega C
通讯作者：
de Mello Donega C
影响因子：
11
作者：
Yambem, Soniya D.;Ullah, Mujeeb;Namdas, Ebinazar B.
通讯作者：
Namdas, Ebinazar B.
影响因子：
10.8
作者：
Protesescu L;Yakunin S;Bodnarchuk MI;Krieg F;Caputo R;Hendon CH;Yang RX;Walsh A;Kovalenko MV
通讯作者：
Kovalenko MV
影响因子：
10.8
作者：
Nam, Jae Keun;Chai, Sung Uk;Park, Jong Hyeok
通讯作者：
Park, Jong Hyeok
实现高效低电压钙钛矿发光二极管的界面控制
影响因子：
29.4
作者：
Wang, Jianpu;Wang, Nana;Huang, Wei
通讯作者：
Huang, Wei