Nanoscale fabrication of the ferroelectric polymer poly(vinylidene fluoride with trifluoroethylene) P(VDF-TrFE) 75:25 thin films by atomic force microscope nanolithography.
Nanoscale fabrication of the ferroelectric polymer poly(vinylidene fluoride with trifluoroethylene) P(VDF-TrFE) 75:25 thin films by atomic force microscope nanolithography.
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通过原子力显微镜纳米光刻技术纳米级制造铁电聚合物聚（偏二氟乙烯与三氟乙烯）P(VDF-TrFE) 75:25 薄膜。
作者：
Vega,Omar;Delgado,David;Wong,Freddy;Gonzalez,Rosette;Rosa,LuisG
有机铁电系统薄膜，聚（偏二氟乙烯与三氟乙烯）P（VDF-TrFE，吴羽公司，日本东京）75：25层，已通过Langmuir-Blodgett技术的水平Schaefer方法沉积在高度有序的热解石墨和二氧化硅上。通过使用原子力显微镜纳米光刻技术（例如纳米剃须）可以“剃须”或机械置换聚合物薄膜的小区域，从而将表面的大片区域切割至 4 nm 和 12 nm 的深度，从而暴露基板。通过纳米切削两个彼此靠近的孔来制造条纹的结果表明，可以生产的材料“条纹”宽度的平均值为 153.29 nm 和 177.67 nm。由于基材与聚合物P(VDF-TrFE)薄膜之间缺乏粘附力，无法产生更小的P(VDF-TrFE)“条纹”，通过纳米剃须区域的测序可以表明薄膜的“条纹”可以被去除。扫描 34: 404‐409, 2012。© 2012 Wiley periodicals, Inc.
Thin films of an organic ferroelectric system, poly(vinylidene fluoride with trifluoroethylene) P(VDF‐TrFE, Kureha Corporation, Tokyo, Japan) 75:25 layers, have been deposited on highly ordered pyrolytic graphite and silicon dioxide by the horizontal Schaefer method of Langmuir–Blodgett techniques. It is possible to “shave” or mechanically displace small regions of the polymer film by using atomic force microscope nanolithography techniques such as nanoshaving, leaving swaths of the surface cut to a depth of 4 nm and 12 nm exposing the substrate. The results of fabricating stripes by nanoshaving two holes close to each other show a limit to the material “stripe” widths of an average of 153.29 nm and 177.67 nm that can be produced. Due to the lack of adhesion between the substrates and the polymer P(VDF‐TrFE) film, smaller “stripes” of P(VDF‐TrFE) cannot be produced, and it can be shown by the sequencing of nanoshaved regions that “stripes” of thin films can be removed. SCANNING 34: 404‐409, 2012. © 2012 Wiley Periodicals, Inc.