Nanoionic Resistive‐Switching Devices
Nanoionic Resistive‐Switching Devices
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DOI：
10.1002/aelm.201900184
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发表时间：
2019-05
影响因子：
6.2
通讯作者：
Xiaojian Zhu;Seung Hwan Lee;W. Lu
中科院分区：
文献类型：
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作者：
Xiaojian Zhu;Seung Hwan Lee;W. Lu
对固态薄膜中纳米级离子过程的理解的进步导致了基于耦合离子-电子效应的器件的快速发展。例如，离子驱动电阻开关（RS）器件因其在开关速度、耐久性、保持性和可扩展性方面的优异性能，已被广泛研究用于未来的存储器应用。最近的研究进一步表明，RS器件不仅仅是具有可调电阻的电阻器;相反，它们表现出丰富而复杂的内部离子动力学，使它们具有原生的信息处理能力，特别是在时间域中。RS效应引起的迁移不同类型的离子，通常由电场驱动，进行了讨论。研究表明，通过利用由离子过程控制的不同状态变量，重要的突触功能可以在固态设备和网络中忠实地实现。最近的努力，提高离子过程的可控性，以优化器件性能进行了讨论，沿着的材料设计和工程的能力，以控制离子过程在原子尺度上启用的新机会。
Advances in the understanding of nanoscale ionic processes in solid‐state thin films have led to the rapid development of devices based on coupled ionic–electronic effects. For example, ion‐driven resistive‐switching (RS) devices have been extensively studied for future memory applications due to their excellent performance in terms of switching speed, endurance, retention, and scalability. Recent studies further suggest that RS devices are more than just resistors with tunable resistance; instead, they exhibit rich and complex internal ionic dynamics that equip them with native information‐processing capabilities, particularly in the temporal domain. RS effects induced by the migration of different types of ions, often driven by an electric field, are discussed. It is shown that, by taking advantage of the different state variables controlled by the ionic processes, important synaptic functions can be faithfully implemented in solid‐state devices and networks. Recent efforts on improving the controllability of ionic processes to optimize device performance are also discussed, along with new opportunities for material design and engineering enabled by the ability to control ionic processes at the atomic scale.