Semiconducting Behavior of the Intermetallic Compound Al2Ru
Semiconducting Behavior of the Intermetallic Compound Al2Ru
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DOI：
10.1209/0295-5075/28/4/009
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发表时间：
1994-11
期刊：
影响因子：
1.8
通讯作者：
P. Volkov;S. Poon
中科院分区：
文献类型：
--
作者：
P. Volkov;S. Poon
我们目前的数据传输性能的多晶样品的金属间化合物Al 2 Ru。高的直流电导率比σ（300 K）/σ（0.46 K）≥ 50和低的电导率比σ（0.46 K）= 0.21 Ω-1cm-1是金属基合金的反常现象。在500 K以上的高温下，σ表现出活化行为，表明能隙与能带结构计算和光导率结果合理一致。对大量样品结果的分析也表明在差距内存在小的本征带。输运和磁输运实验表明，Al_2Ru在低温下仍是一种经典的半导体。
We present data on transport properties of polycrystalline samples of the intermetallic compound Al2Ru. The high d.c. conductivity ratio σ(300 K)/σ(0.46 K) ≈ 50 and low conductivity σ(0.46 K) = 0.21 Ω-1 cm-1 are anomalous for metal-based alloys. At high temperature, above 500 K, σ exhibits an activated behavior indicative of an energy gap in reasonable agreement with band structure calculations and optical-conductivity results. Analysis of results on a large number of samples suggests also the existence of a small intrinsic band inside the gap. Transport and magnetotransport experiments indicate that Al2Ru is a classical semiconductor even at low temperature.