Effect of Sn dopant on the properties of ZnO nanowires
Effect of Sn dopant on the properties of ZnO nanowires
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DOI：
10.1088/0022-3727/37/16/009
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发表时间：
2004-08
期刊：
影响因子：
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通讯作者：
Seu Yi Li;P. Lin;Chia Ying Lee;T. Tseng;Chorng-Jye Huang
中科院分区：
文献类型：
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作者：
Seu Yi Li;P. Lin;Chia Ying Lee;T. Tseng;Chorng-Jye Huang
通过气 - 液 - 固生长工艺制备了掺锡氧化锌（SZO）纳米线。由于锡的掺杂，纳米线形成的反应温度可降低至约100°C。SZO纳米线的生长方向和形态取决于锡的含量，这归因于锌原子和锡原子尺寸的差异。由于锡作为双电离施主并在带隙中引入深能级，SZO纳米线的紫外发射波长在380到396纳米之间变化。此外，与未掺杂的氧化锌纳米线相比，在电流密度为0.5毫安/平方厘米时，SZO纳米线表现出显著改善的场发射特性，其开启电场为0.05伏/微米。对于更高的载流子浓度，SZO纳米线的功函数降低，并且对于更小的直径，场增强因子增加。而且，对于更高的锡摩尔分数，SZO纳米线的电阻降低。因此，预计SZO纳米线未来可应用于纳米激光器和平板显示器中。
Sn doped ZnO (SZO) nanowires were fabricated by a vapour–liquid–solid growth process. The reaction temperature for the formation of the nanowires can be reduced to ~100°C due to Sn doping. The growth direction and morphology of SZO nanowires depend on the amount of Sn, which is attributed to the difference in sizes between Zn and Sn atoms. The ultraviolet emission of SZO nanowires varies from 380 to 396 nm since Sn acts as a doubly ionized donor and introduces deep states in the band gap. In addition, the SZO nanowires exhibit significantly improved field emission characteristics with a turn-on electric field of 0.05 V µm−1 under a current density of 0.5 mA cm−2 in comparison with undoped ZnO nanowires. The work function of the SZO nanowire decreases for higher carrier concentrations and the field enhancement factor increases for smaller diameters. Also, the resistance of the SZO nanowire is decreased for the higher Sn mole fraction. Therefore, it is expected that SZO nanowires can be applied in nano-lasers and flat panel displays in the future.