Nanoscale Engineering and Optical Addressing of Single Spins in Diamond
Nanoscale Engineering and Optical Addressing of Single Spins in Diamond
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DOI：
10.1002/smll.201000902
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发表时间：
2010-10-04
期刊：
影响因子：
13.3
通讯作者：
Meijer, Jan
中科院分区：
文献类型：
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作者：
Pezzagna, Sebastien;Wildanger, Dominik;Meijer, Jan
Sébastien Pezzagna、* Dominik Wildanger、Paul Mazarov、Andreas D. Wieck、Yanko Sarov、Ivo Rangelow、Boris Naydenov、Fedor Jelezko、Stefan W. Hell 和 Jan Meijer 的负电荷态由三重基态和第一激发态组成。这些三联体之间的强光学跃迁（荧光寿命− 11.5 ns）允许通过荧光显微镜检测单个中心。由于缺陷前所未有的光稳定性，它们成为受激发射损耗显微镜（STED）[12]或基态损耗显微镜（GSD）等新型显微镜技术分辨率测试的模型系统。[13]对于技术应用来说至关重要的是，可以通过将单个氮原子注入金刚石晶格并随后退火来创建色心。首次植入实验 [14, 15] 表明，需要解决与色心创建相关的两个主要问题：(a) 空间分辨率和 (b) 色心创建的产量。注入技术对由于注入过程中金刚石晶格中氮的散乱而产生的缺陷定位精度具有内在的限制。低（几keV）能量对于实现纳米范围内的定位精度是必要的，但是在这种情况下，在退火过程中氮向氮空位中心的转化率很低[16]（由于空位数量不足，在退火过程中表面捕获空位，[17]以及更高的NV/NV−比率，只有几个百分点）。靠近表面产生的浅层 NV 中心也发现了作为超灵敏纳米级磁传感器的有前途的应用。[18-20]最近表明，通过注入碳对金刚石进行后处理可以提高转换效率。[21]在这里，我们展示了使用新型注入技术可以实现 NV 注入的高空间精度。由于掺杂剂埋入金刚石晶格中，因此无法使用 AFM 或 STM 等扫描探针技术来表征所创建的阵列。我们证明，可以使用远场光学 STED 显微镜来完成单个注入原子的纳米尺度映射。图 1 给出了注入和测量程序的方案。氮束的准直和定位结合在原子力显微镜的空心尖端内。在第一个实验中，使用孔径≥ 100 nm 的刺穿尖端。将不同的图案植入高纯度金刚石（富含 12C，元素 6）中，注入 5 keV 15N+ 离子，注量范围为 1× 10 11 至 3.3× 10 13 cm− 2。由于低能量下 NV 中心的产生效率较低，只有高注量才能产生清晰可见的图案。图 1 中的共焦扫描显示了六边形图案（每个点之间 500 nm），每个点的注量为 1× 10 13 cm− 2 。一个 DOI：10.1002/sll。 201000902
Sébastien Pezzagna,* Dominik Wildanger, Paul Mazarov, Andreas D. Wieck, Yanko Sarov, Ivo Rangelow, Boris Naydenov, Fedor Jelezko, Stefan W. Hell, and Jan Meijer of the negatively charged state consists of triplet ground and first excited states. Strong optical transition between these triplets (fluorescence lifetime− 11.5 ns) allows detection of single centres via fluorescence microscopy. Owing to unprecedented photostability of defects, they become a model system for resolution test of novel microscopy techniques like stimulated emission depletion microscopy (STED)[12] or ground state depletion microscopy (GSD).[13] It is crucial for technological applications that color centres can be created using implantation of single nitrogen atoms into diamond lattice followed by annealing. First implantation experiments [14, 15] have shown that two major issues related to the creation of color centres need to be addressed:(a) spatial resolution and (b) yield of creation of color centres. Implantation technique has intrinsic limitation on defects positioning accuracy arising from straggling of nitrogen in diamond lattice during implantation. Low (a few keV) energy is necessary for achieving a positioning accuracy in the nanometer range, however the yield of conversion of nitrogen to nitrogen-vacancy centres during annealing is low in this case [16](a few percents, due to an insufficient number of vacancies, to surface trapping of vacancies during annealing,[17] and to higher NV/NV− ratio). Shallow NV centres produced close to the surface also find promising applications as ultrasensitive, nanoscale magnetic sensors.[18–20] Recently it was shown that post-processing of diamond via implantation of carbon allows improving conversion efficiency.[21] Here we show that high spatial accuracy of NV implantation can be realised using novel implantation technology. Since dopants are buried into the diamond lattice, scanning probe techniques like AFM or STM cannot be used to characterise the created arrays. We show that nanometer scale mapping of single implanted atoms can be done using far-field optical STED microscopy. A scheme of the implantation and measurement procedures is presented in Figure 1. Collimating and positioning of the nitrogen beam are combined within the hollow tip of an atomic force microscope. In a first experiment, a pierced tip with a hole diameter≥ 100 nm was used. Different patterns were implanted in a high purity diamond (12C enriched, Element 6) with 5 keV 15N+ ions and with fluences ranging from 1× 10 11 to 3.3× 10 13 cm− 2. Due to the low creation efficiency of NV centres at low energy, only the high fluences resulted in clearly visible patterns. The confocal scan in Figure 1 shows a hexagonal pattern (500 nm between each spot) implanted with a fluence of 1× 10 13 cm− 2 per spot. One DOI: 10.1002/smll. 201000902