Carrier-Funneling-Induced Efficient Energy Transfer in CdSxSe1-x Heterostructure Microplates
Carrier-Funneling-Induced Efficient Energy Transfer in CdSxSe1-x Heterostructure Microplates
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CdSxSe1-x 异质结构微孔板中载流子漏斗诱导的高效能量转移
DOI:
10.1021/acsenergylett.9b01942
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发表时间:
2019
影响因子:
22
通讯作者:
Dapeng Yu
中科院分区:
文献类型:
--
作者:
Weihao Zheng;Huawei Liu;Jun Xu;Ying Tang;Peng Fan;Wei Huang;Feng Jiang;Lihui Li;Xiaopeng Fan;Xiaoli Zhu;Xiujuan Zhuang;Anlian Pan;Dapeng Yu
The energy transfer of semiconductor heterostructure microplates (H-MPs) plays a crucial role in the performance of various optoelectronic devices they construct. Compared to compact heterostructures, the energy transfer in H-MPs involves an additional carrier diffusion process which results in a low carrier population at the heterointerface and thereby leads to a poor energy-transfer efficiency. Based on an energy-funneling mechanism, CdSxSe1–xlateral H-MPs with a bandgap-graded donor are engineered to efficiently and directionally drive carriers to the heterointerface. The cathode-luminescence study visually presents the enhancement of the carrier transport efficiency. We systematically studied the energy-transfer process in the H-MPs through time-resolved photoluminescence experiments. Compared to the low-energy input efficiency (EIE) of ∼20.5% in a common H-MP without a bandgap-graded donor, the EIE for a CdSxSe1–xH-MP with a bandgap-graded donor can be improved to ∼109.3%. This bandgap engineering gives a general strategy to improve the energy-transfer efficiency in H-MPs.