Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105 cm2 V−1 s−1
Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105 cm2 V−1 s−1
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DOI：
10.1063/1.104613
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发表时间：
1991-02
影响因子：
4
通讯作者：
C. Stanley;M. Holland;A. Kean;M. Stanaway;R. T. Grimes;J. M. Chamberlain
中科院分区：
文献类型：
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作者：
C. Stanley;M. Holland;A. Kean;M. Stanaway;R. T. Grimes;J. M. Chamberlain
用4-300K霍尔测量和4.2K远红外光导光谱研究了As4GaAs2裂解炉温度(Tcr)在600~700℃之间的变化对分子束外延生长→材料性能的影响。1)。在As_2生长条件下(T_(Cr)=700°C)，剩余施主为硅和硫，−_3浓度在10~13 cm之间。通过降低Tcr，硅的浓度大大降低，使硫成为主要的杂质。在Tcr=650°C下生长的15μm厚层，测得≊的自由电子密度为2.8×10~(13)cm−~3，峰值迁移率≊为4×10~5cm2 V−_1 S−_1，在≊28-42K，是体相记录中最高的。
The effect of varying the temperature (T cr) of an As4→As2 cracker furnace between 600 and 700 °C on the properties of GaAs grown by molecular beam epitaxy has been evaluated using 4–300 K Hall measurements and 4.2 K far‐infrared photoconduction spectroscopy, in an extension of earlier work on high‐mobility material (Ref. 1). The residual donors are silicon and sulphur with mid‐1013 cm−3 concentrations under As2‐growth conditions (T cr=700 °C). By lowering T cr, the silicon concentration is reduced substantially, leaving sulphur as the principal impurity. A 15‐μm‐thick layer grown with T cr=650 °C has measured free‐electron densities of ≊2.8×1013 cm−3 and peak mobilities ≊4×105 cm2 V−1 s−1 at ≊28–42 K, the highest ever recorded in bulk GaAs.